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KM29W32000AT - 4M x 8-Bit NAND Flash Memory

This page provides the datasheet information for the KM29W32000AT, a member of the KM29W32000AIT 4M x 8-Bit NAND Flash Memory family.

Description

The KM29W32000A is a 4M(4,194,304)x8bit NAND Flash Memory with a spare 128K(131,072)x8bit.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Features

  • Voltage Supply : 2.7V ~ 5.5V.
  • Organization - Memory Cell Array : (4M + 128K)bit x 8bit - Data Register : (512 + 16)bit x8bit.
  • Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte - Status Register.
  • 528-Byte Page Read Operation - Random Access : 10µs(Max. ) - Serial Page Access : 50ns(Min. ).
  • Fast Write Cycle Time - Program time : 250µs(typ. ) - Block Erase time : 2ms(typ. ).
  • Command/Address/Data Multiplexed.

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Other Datasheets by Samsung Semiconductor

Full PDF Text Transcription

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KM29W32000AT, KM29W32000AIT Document Title 4M x 8 Bit NAND Flash Memory Revision History w w w Revision No. History 0.0 0.1 Initial issue. Data Sheet, 1999 1) Added CE don’ t care mode during the data-loading and reading .D at h S a t e e 4U . m o c FLASH MEMORY Draft Date April 10th 1998 April 10th 1999 Remark Advanced Information Final w w w .D t a S a e h t e U 4 .c m o The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. 1 w w w .D at h S a t e e 4U .
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