Datasheet4U Logo Datasheet4U.com

KM29U128T - 16M x 8 Bit NAND Flash Memory

Datasheet Summary

Description

The KM29U128 is a 16M(16,777,216)x8bit NAND Flash Memory with a spare 512K(524,288)x8bit.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Features

  • Voltage supply : 2.7V~3.6V.
  • Organization - Memory Cell Array : (16M + 512K)bit x 8bit - Data Register : (512 + 16)bit x8bit.
  • Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte.
  • 528-Byte Page Read Operation - Random Access : 10µ s(Max. ) - Serial Page Access : 50ns(Min. ).
  • Fast Write Cycle Time - Program time : 200µ s(typ. ) - Block Erase time : 2ms(typ. ).
  • Command/Address/Data Multiplexed I/O port.

📥 Download Datasheet

Datasheet preview – KM29U128T

Datasheet Details

Part number KM29U128T
Manufacturer Samsung semiconductor
File Size 481.69 KB
Description 16M x 8 Bit NAND Flash Memory
Datasheet download datasheet KM29U128T Datasheet
Additional preview pages of the KM29U128T datasheet.

📁 Similar Datasheet

Other Datasheets by Samsung semiconductor

Full PDF Text Transcription

Click to expand full text
KM29U128T, KM29U128IT Document Title 16M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 Initial issue. 1) Changed tPROG Parameter : 1ms(Max.) → 500µs(Max.) 2) Changed tBERS Parameter : 4ms(Max.) → 3ms(Max.) 3) Changed Input and Output Timing Level 0.8V and 2.0V → 1.5V 1.1 1) Changed tR Parameter : 7 µs(Max.) → 10µs(Max.) 2) Changed Nop : 10 cycles(Max.) → Main Array 2 cycles(Max.) Spare Array 3 cycles(Max.) 3) Added CE don’ t care mode during the data-loading and reading April 10th 1999 Final Draft Date April 10th 1998 July 14th 1998 Remark Preliminary Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications.
Published: |