KM29U128T Datasheet - Samsung semiconductor

KM29U128T 16M x 8 Bit NAND Flash Memory

The KM29U128 is a 16M(16,777,216)x8bit NAND Flash Memory with a spare 512K(524,288)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 200µs and an erase operation can be performed in typi.

KM29U128T, KM29U128IT Document Title 16M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 Initial issue. 1) Changed tPROG Parameter : 1ms(Max.) → 500µs(Max.) 2) Changed tBERS Parameter : 4ms(Max.) → 3ms(Max.) 3) Changed Input and Output Timing Level 0.8V and 2.0V → 1.5V 1.1 1) Changed tR Parameter : 7 µs(Max.) → 10µs(Max.) 2) Changed Nop : 10 cycles(Max.) → Main Array 2 cycles(Max.) Spare Array 3 cycles(Max.) 3) Added CE don’ t care mode during the data-load.

KM29U128T Features

* Voltage supply : 2.7V~3.6V

* Organization - Memory Cell Array : (16M + 512K)bit x 8bit - Data Register : (512 + 16)bit x8bit

* Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte

* 528-Byte Page Read Operation - Random Access

KM29U128T_Samsungsemiconductor.pdf