* Voltage Supply: 3.0V~5.5V
* Organization - Memory Cell Array : 512K x 8 - Data Register : 32 x 8 bit
* Automatic Program and Erase (Typical) - Frame Program : 32 Byte in 500µs - Block Erase : 4K Byte in 6ms
* 32-Byte Frame Read Operation - Random Access : 15 µs(Max.
KM29W040AT Datasheet (359.52 KB)
KM29W040AT
Samsung semiconductor
359.52 KB
512k x 8 bit nand flash memory.
KM29W040AT, KM29W040AIT
Document Title
512K x 8 bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No. History
0.0 1.0 1.1 Initial issue. .
📁 Related Datasheet
KM29W16000ATS - 2M x 8-Bit NAND Flash Memory
(Samsung Electronics)
KM29W16000ATS
Document Title
2M x 8 Bit NAND Flash Memory
Revision History
Revision No. History 0.0 Initial issue. 1.1 Data Sheet 1998.
FLASH MEMORY
.
KM29W32000AIT - 4M x 8-Bit NAND Flash Memory
(Samsung Semiconductor)
KM29W32000AT, KM29W32000AIT
Document Title
4M x 8 Bit NAND Flash Memory
Revision History
w
w
w
Revision No. History
0.0 0.1 Initial issue. Data S.
KM29W32000AT - 4M x 8-Bit NAND Flash Memory
(Samsung Semiconductor)
KM29W32000AT, KM29W32000AIT
Document Title
4M x 8 Bit NAND Flash Memory
Revision History
w
w
w
Revision No. History
0.0 0.1 Initial issue. Data S.
KM29W32000TS - 4M x 8-Bit NAND Flash Memory
(Samsung Semiconductor)
KM29W32000TS
Document Title
4M x 8 Bit NAND Flash Memory
Revision History
w
w
w
Revision No. History
0.0 1.0 1.1 Initial issue. Data Sheet, 1998.
KM29N040IT - Flash Memory
(Samsung Electronics)
..
KM29N040T, KM29N040IT
Document Title
512K x 8 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No. History
0.0 1.0 .
KM29N040T - Flash Memory
(Samsung Electronics)
..
KM29N040T, KM29N040IT
Document Title
512K x 8 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No. History
0.0 1.0 .
KM29N16000 - 2M x 8-Bit NAND Flash Memory
(Samsung Electronics)
.
KM29N16000AIT - 2M x 8-Bit NAND Flash Memory
(Samsung Electronics)
.
