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KM29W040AT - 512K x 8 bit NAND Flash Memory

Datasheet Summary

Description

The KM29W040A is a 512Kx8bit NAND Flash Memory.

Its NAND cell structure provides the most cost-effective solution for Digital Audio Recording.

A Program operation programs a 32-byte frame in typically 500µs and an Erase operation erase a 4K-byte block in typically 6ms.

Features

  • Voltage Supply: 3.0V~5.5V.
  • Organization - Memory Cell Array : 512K x 8 - Data Register : 32 x 8 bit.
  • Automatic Program and Erase (Typical) - Frame Program : 32 Byte in 500µs - Block Erase : 4K Byte in 6ms.
  • 32-Byte Frame Read Operation - Random Access : 15 µs(Max. ) - Serial Frame Access : 120ns(Min. ).
  • Command/Address/Data Multiplexed I/O port.
  • Low Operation Current (Typical) - 10µA Standby Current - 10mA Read/ Program/Erase Current.

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Datasheet Details

Part number KM29W040AT
Manufacturer Samsung semiconductor
File Size 359.52 KB
Description 512K x 8 bit NAND Flash Memory
Datasheet download datasheet KM29W040AT Datasheet
Additional preview pages of the KM29W040AT datasheet.

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Full PDF Text Transcription

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KM29W040AT, KM29W040AIT Document Title 512K x 8 bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 1.1 Initial issue. 1) Changed Operating Voltage 2.7V ~ 5.5V → 3.0V ~ 5.5V Data Sheet 1999 1) Added CE don’ t care mode during the data-loading and reading Draft Date April 10th 1998 July 14th 1998 April 10th 1999 Remark Preliminary Final Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. 1 KM29W040AT, KM29W040AIT 512K x 8 Bit NAND Flash Memory FEATURES • Voltage Supply: 3.0V~5.
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