KM29W040AT Datasheet - Samsung semiconductor

KM29W040AT 512K x 8 bit NAND Flash Memory

The KM29W040A is a 512Kx8bit NAND Flash Memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recording. A Program operation programs a 32-byte frame in typically 500µs and an Erase operation erase a 4K-byte block in typically 6ms. Data in a frame can be read ou.

KM29W040AT, KM29W040AIT Document Title 512K x 8 bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 1.1 Initial issue. 1) Changed Operating Voltage 2.7V ~ 5.5V → 3.0V ~ 5.5V Data Sheet 1999 1) Added CE don’ t care mode during the data-loading and reading Draft Date April 10th 1998 July 14th 1998 April 10th 1999 Remark Preliminary Final Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right .

KM29W040AT Features

* Voltage Supply: 3.0V~5.5V

* Organization - Memory Cell Array : 512K x 8 - Data Register : 32 x 8 bit

* Automatic Program and Erase (Typical) - Frame Program : 32 Byte in 500µs - Block Erase : 4K Byte in 6ms

* 32-Byte Frame Read Operation - Random Access : 15 µs(Max.

KM29W040AT_Samsungsemiconductor.pdf