KM29U64000T, KM29U64000IT - 8M x 8 Bit NAND Flash Memory

Samsung semiconductor

Datasheet Details

Part number	KM29U64000T, KM29U64000IT
Manufacturer	Samsung semiconductor
File Size	481.39 KB
Description	8M x 8 Bit NAND Flash Memory
Datasheet	KM29U64000IT_Samsungsemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: KM29U64000T, KM29U64000IT. Please refer to the document for exact specifications by model.

The KM29U64000 is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit.

Voltage Supply : 2.7V ~ 3.6V.
Organization - Memory Cell Array : (8M + 256K)bit x 8bit - Data Register : (512 + 16)bit x8bit.
Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte.
528-Byte Page Read Operation - Random Access : 7µs(Max. ) - Serial Page Access : 50ns(Min. ).
Fast Write Cycle Time - Program time : 200 µs(typ. ) - Block Erase time : 2ms(typ. ).
Command/Address/Data Multiplexed I/O port.

📁 KM29U64000T Similar Datasheet

Other Datasheets by Samsung semiconductor

Published: Dec 23, 2005 |