KM29U64000T Datasheet PDF - Samsung semiconductor 8M x 8 Bit NAND Flash Memory Specs

KM29U64000T - 8M x 8 Bit NAND Flash Memory

This page provides the datasheet information for the KM29U64000T, a member of the KM29U64000IT 8M x 8 Bit NAND Flash Memory family.

Datasheet Summary

Description

The KM29U64000 is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Features

Voltage Supply : 2.7V ~ 3.6V.
Organization - Memory Cell Array : (8M + 256K)bit x 8bit - Data Register : (512 + 16)bit x8bit.
Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte.
528-Byte Page Read Operation - Random Access : 7µs(Max. ) - Serial Page Access : 50ns(Min. ).
Fast Write Cycle Time - Program time : 200 µs(typ. ) - Block Erase time : 2ms(typ. ).
Command/Address/Data Multiplexed I/O port.

Datasheet Details

Part number	KM29U64000T
Manufacturer	Samsung semiconductor
File Size	481.39 KB
Description	8M x 8 Bit NAND Flash Memory
Datasheet	KM29U64000T Datasheet
Additional preview pages of the KM29U64000T datasheet.

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Full PDF Text Transcription

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KM29U64000T, KM29U64000IT Document Title 8M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 1.1 Initial issue. Data Sheet, 1998 Data Sheet. 1999 1) Added CE don’ t care mode during the data-loading and reading Draft Date April 10th 1998 July 14th 1998 April 10th 1999 Remark Preliminary Final Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. 1 KM29U64000T, KM29U64000IT 8M x 8 Bit NAND Flash Memory FEATURES • Voltage Supply : 2.7V ~ 3.

Published: Dec 23, 2005 |