KM68V257E Datasheet (Samsung Semiconductor) - 32K X 8 Bit High Speed CMOS Static RAM

KM68V257E, 32K X 8 Bit High Speed CMOS Static RAM

The KM68V257E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits.

The KM68V257E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle.

The device is fabricated using SAMSUNG′s advanced C

w w .

U 4 CMOS Static RAM (3.3V Operating) 32Kx8 Bit High-Speed t Operated at Commercial and Industrial Temperature Range.

e e h Revision History S a t a D .

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No.

History Rev.

0.0 Rev.

1.0 Initial Draft Release to Final Data Sheet 1.

Delete Preliminary 2.

Delete Data Retention 3.

Relex Standby current Item Previous Isb1 0.3mA Current 0.5mA 2mA Remark L-ver.

Normal KM68V257E/EL, KM68V257EI/ELI m o c CMOS SRAM Draft Data Aug.

1998 Sep.

1998 Remark Preliminary Fina

KM68V257E Features

* Fast Access Time 12,15,20ns(Max.)

* Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 2.0mA(Max.) 0.5mA(Max.) L-ver. only Operating KM68V257E - 12 : 70mA(Max.) KM68V257E - 15 : 70mA(Max.) KM68V257E - 20 : 70mA(Max.)

* Single 3.3 ±0.3V Power Supply

* TTL Comp