M53231600CE0 Datasheet - Samsung Semiconductor

M53231600CE0 (M53231600CE0/CJ0-C) DRAM Module

The Samsung M53231600CE0/CJ0-C is a 16Mx32bits Dynamic RAM high density memory module. The Samsung M53231600CE0/CJ0-C consists of eight CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for eac.

www.DataSheet4U.com DRAM MODULE M53231600CE0/CJ0-C 4Byte 16Mx32 SIMM (16Mx4 base) DataSheet4U.com DataShee Revision 0.0 June 1999 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DRAM MODULE Revision History Version 0.0 (June 1999) The 4th. generation of 64Mb DRAM components are applied for this module. M53231600CE0/CJ0-C et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet4 U .com www.DataSheet4U.com DRAM MODULE M53231600CE0/CJ0-C EDO Mode 16M x 32 DRAM .

M53231600CE0 Features

* Part Identification - M53231600CE0-C(4K cycles/64ms Ref, SOJ, Solder) - M53231600CJ0-C(4K cycles/64ms Ref, SOJ, Gold)

* Extended Data Out Mode Operation

* CAS-before-RAS & Hidden Refresh capability

* RAS-only refresh capability

* TTL compatible inputs and ou

M53231600CE0_SamsungSemiconductor.pdf