K4S560432A Datasheet - Samsung semiconductor

K4S560432A 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL

The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock.

K4S560432A Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

K4S560432A Datasheet (127.52 KB)

K4S560432A Datasheet Preview — Preview of K4S560432A PDF

Datasheet Details

Part number:

K4S560432A

Manufacturer:

Samsung semiconductor

File Size:

127.52 KB

Description:

256mbit sdram 16m x 4bit x 4 banks synchronous dram lvttl.

📁 Related Datasheet

K4S560432B 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

K4S560432E-NC75 SDRAM 256Mb E-die (Samsung semiconductor)

K4S560432E-NCL75 SDRAM 256Mb E-die (Samsung semiconductor)

K4S560432E-TC75 256Mb E-die SDRAM Specification (Samsung semiconductor)

K4S560432E-TL75 256Mb E-die SDRAM Specification (Samsung semiconductor)

K4S560432E-UC75 SDRAM 256Mb E-die (Samsung)

K4S560432J 256Mb J-die SDRAM Specification (Samsung semiconductor)

K4S560432N 256Mb N-die SDRAM (Samsung semiconductor)

K4S560832A 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

K4S560832B 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

TAGS

K4S560432A 256Mbit SDRAM 16M 4bit Banks Synchronous DRAM LVTTL Samsung semiconductor

Image Gallery

K4S560432A Distributor