K4S560432A
Samsung semiconductor
127.52kb
256mbit sdram 16m x 4bit x 4 banks synchronous dram lvttl. The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated wit
TAGS
📁 Related Datasheet
K4S560432B - 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
(Samsung semiconductor)
K4S560432B
CMOS SDRAM
256Mbit SDRAM
16M x 4bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.2 May. 2000
* Samsung Electronics reserves the right to.
K4S560432E-NC75 - SDRAM 256Mb E-die
(Samsung semiconductor)
SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
256Mb E-die SDRAM Specification 54pin sTSOP-II
Revision 1.0 August. 2003
* Samsung Electronics reserves .
K4S560432E-NCL75 - SDRAM 256Mb E-die
(Samsung semiconductor)
SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
256Mb E-die SDRAM Specification 54pin sTSOP-II
Revision 1.0 August. 2003
* Samsung Electronics reserves .
K4S560432E-TC75 - 256Mb E-die SDRAM Specification
(Samsung semiconductor)
SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
256Mb E-die SDRAM Specification
Revision 1.3 September. 2003
* Samsung Electronics reserves the right t.
K4S560432E-TL75 - 256Mb E-die SDRAM Specification
(Samsung semiconductor)
SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
256Mb E-die SDRAM Specification
Revision 1.3 September. 2003
* Samsung Electronics reserves the right t.
K4S560432E-UC75 - SDRAM 256Mb E-die
(Samsung)
SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
256Mb E-die SDRAM Specification
54 TSOP-II with Pb-Free (RoHS pliant)
Revision 1.3 August 2004
* Sams.
K4S560432J - 256Mb J-die SDRAM Specification
(Samsung semiconductor)
K4S560432J K4S560832J K4S561632J
Synchronous DRAM
256Mb J-die SDRAM Specification
54 TSOP-II with Lead-Free & Halogen-Free
(RoHS pliant)
INFORMA.
K4S560432N - 256Mb N-die SDRAM
(Samsung semiconductor)
Rev. 1.0, Apr. 2010 K4S560432N K4S560832N K4S561632N
256Mb N-die SDRAM
54TSOP(II) with Lead-Free & Halogen-Free (RoHS pliant)
datasheet SAMSUNG ELE.
K4S560832A - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
(Samsung semiconductor)
K4S560832A
CMOS SDRAM
256Mbit SDRAM
8M x 8bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.0 Sep. 1999
* Samsung Electronics reserves the right to .
K4S560832B - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
(Samsung semiconductor)
K4S560832B
CMOS SDRAM
256Mbit SDRAM
8M x 8bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.2 May. 2000
* Samsung Electronics reserves the right to .
Stock and price