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K4S643233H-FN

Mobile-SDRAM

K4S643233H-FN Features

* 3.0V & 3.3V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle

K4S643233H-FN General Description

The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every cloc.

K4S643233H-FN Datasheet (170.23 KB)

Preview of K4S643233H-FN PDF

Datasheet Details

Part number:

K4S643233H-FN

Manufacturer:

Samsung semiconductor

File Size:

170.23 KB

Description:

Mobile-sdram.

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K4S643233H - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed a.

K4S643233H-FE - Mobile-SDRAM (Samsung semiconductor)
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K4S643233H-FN Mobile-SDRAM Samsung semiconductor

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