K4S64323LH-FE
Samsung semiconductor
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512k x 32bit x 4 banks mobile sdram. The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with S
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K4S64323LH-FC - 512K x 32Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S64323LH - F(H)E/N/G/C/L/F
512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address..
K4S64323LH-FF - 512K x 32Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S64323LH - F(H)E/N/G/C/L/F
512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address..
K4S64323LH-FG - 512K x 32Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S64323LH - F(H)E/N/G/C/L/F
512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address..
K4S64323LH-FHx - 512K x 32Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S64323LH - F(H)E/N/G/C/L/F
512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address..
K4S64323LH-FL - 512K x 32Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S64323LH - F(H)E/N/G/C/L/F
512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address..
K4S64323LH-FN - 512K x 32Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S64323LH - F(H)E/N/G/C/L/F
512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address..
K4S64323LH-FN60 - 512K x 32Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S64323LH - F(H)E/N/G/C/L/F
512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address..
K4S64323LF-xx - 2Mx32 Mobile SDRAM 90FBGA
(Samsung semiconductor)
K4S64323LF-S(D)N/U/P
CMOS SDRAM
2Mx32 Mobile SDRAM 90FBGA
(VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V)
..
Revision 1.5 December 2002
Rev. 1.
K4S643232C - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
(Samsung semiconductor)
K4S643232C
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks Synchronous DRAM LVTTL
Revision 1.1 November 1999
Samsung Electronics reserves the righ.
K4S643232E - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
(Samsung semiconductor)
K4S643232E
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks Synchronous DRAM LVTTL
Revision 1.3 October 2001
Samsung Electronics reserves the right.