K7J161882B Datasheet - Samsung semiconductor

(K7J161882B / K7J163682B) 512Kx36 & 1Mx18 DDR II SIO b2 SRAM

K7J161882B Features

* 1.8V+0.1V/-0.1V Power Supply.

* DLL circuitry for wide output data valid window and future freguency scaling.

* I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/ -0.1V for 1.8V I/O.

* Separate independent read and write data ports

* HSTL I/O

K7J161882B General Description

Input Clock Input Clock for Output Data Output Echo Clock DLL Disable when low Address Inputs Data Inputs 1 NOTE Q0-35 Data Outputs Read, Write Control Pin, Read active when high Synchronous Load Pin, bus Cycle sequence is to be defined when low Block Write Control Pin,active when low Input Refere.

K7J161882B Datasheet (418.32 KB)

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Datasheet Details

Part number:

K7J161882B

Manufacturer:

Samsung semiconductor

File Size:

418.32 KB

Description:

(k7j161882b / k7j163682b) 512kx36 & 1mx18 ddr ii sio b2 sram.
K7J163682B K7J161882B www.DataSheet4U.com Document Title 512Kx36 & 1Mx18 DDR II SIO b2 SRAM 512Kx36-bit, 1Mx18-bit DDR II SIO b2 SRAM Revision Hist.

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K7J161882B K7J161882B K7J163682B 512Kx36 1Mx18 DDR SIO SRAM Samsung semiconductor

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K7J161882B Features

K7J161882B General Description

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