K7J641882M Datasheet - Samsung semiconductor

(K7J641882M / K7J643682M) 72Mb M-die DDRII SRAM Specification

K7J641882M Features

* 1.8V+0.1V/-0.1V Power Supply.

* DLL circuitry for wide output data valid window and future freguency scaling.

* I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/ -0.1V for 1.8V I/O.

* Separate independent read and write data ports

* HSTL I/O

K7J641882M General Description

Input Clock Input Clock for Output Data Output Echo Clock DLL Disable when low Address Inputs Data Inputs 1 NOTE Q0-35 Data Outputs Read, Write Control Pin, Read active when high Synchronous Load Pin, bus Cycle sequence is to be defined when low Block Write Control Pin,active when low Input Refere.

K7J641882M Datasheet (361.01 KB)

K7J641882M Datasheet Preview — Preview of K7J641882M PDF

Datasheet Details

Part number:

K7J641882M

Manufacturer:

Samsung semiconductor

File Size:

361.01 KB

Description:

(k7j641882m / k7j643682m) 72mb m-die ddrii sram specification.
K7J643682M K7J641882M www.DataSheet4U.com 2Mx36 & 4Mx18 DDR II SIO b2 SRAM 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS comp.

📁 Related Datasheet

K7J643682M (K7J641882M / K7J643682M) 72Mb M-die DDRII SRAM Specification (Samsung semiconductor)

K7J161882B (K7J161882B / K7J163682B) 512Kx36 & 1Mx18 DDR II SIO b2 SRAM (Samsung semiconductor)

K7J163682B (K7J161882B / K7J163682B) 512Kx36 & 1Mx18 DDR II SIO b2 SRAM (Samsung semiconductor)

K7J321882M (K7J321882M / K7J323682M) 1Mx36 & 2Mx18 DDR II SIO b2 SRAM (Samsung semiconductor)

K7J323682M (K7J321882M / K7J323682M) 1Mx36 & 2Mx18 DDR II SIO b2 SRAM (Samsung semiconductor)

K701 2SK701 (ETC)

K703 2SK703 (NEC)

K70P256M120SF3 MCU (NXP)

K70P256M150SF3 MCU (NXP)

K715 2SK715 (SANYO Electric)

TAGS

K7J641882M K7J641882M K7J643682M 72Mb M-die DDRII SRAM Specification Samsung semiconductor

Image Gallery

K7J641882M Features

K7J641882M General Description

Datasheet Details

File Size:

Description:

K7J641882M Distributor