K7K3218T2C 1Mx36 & 2Mx18 DDRII CIO b2 SRAM

Samsung semiconductor

Description

K7K3236T2C K7K3218T2C 1Mx36 & 2Mx18 DDRII+ CIO b2 SRAM 36Mb DDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN TH.
Input Clock Q Valid output Output Echo Clock DLL Disable Address Inputs Data Inputs Outputs Read, Write Control Pin, Read active when high Synchronous.

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Datasheet Specifications

Part number: K7K3218T2C
Manufacturer: Samsung semiconductor
File Size: 440.01 KB
Datasheet: K7K3218T2C_Samsungsemiconductor.pdf
Description: 1Mx36 & 2Mx18 DDRII CIO b2 SRAM

Features

* 1.8V+0.1V/-0.1V Power Supply.
* DLL circuitry for wide output data valid window and future freguency scaling.
* I/O Supply Voltage 1.5V+0.1V/-0.1V
* Pipelined, double-data rate operation.
* Common data input/output bus .
* HSTL I/O
* Full dat

Applications

* where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice. ww

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K7K3218T2C 1Mx36 2Mx18 DDRII CIO SRAM Samsung semiconductor

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