K7K1618T2C 512Kx36 & 1Mx18 DDRII CIO b2 SRAM

Samsung semiconductor

Description

K7K1636T2C K7K1618T2C 512Kx36 & 1Mx18 DDRII+ CIO b2 SRAM 18Mb DDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN .
Input Clock Q Valid output Output Echo Clock DLL Disable Address Inputs Data Inputs Outputs Read, Write Control Pin, Read active when high Synchronous.

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Datasheet Specifications

Part number: K7K1618T2C
Manufacturer: Samsung semiconductor
File Size: 440.53 KB
Datasheet: K7K1618T2C_Samsungsemiconductor.pdf
Description: 512Kx36 & 1Mx18 DDRII CIO b2 SRAM

Features

* 1.8V+0.1V/-0.1V Power Supply.
* DLL circuitry for wide output data valid window and future freguency scaling.
* I/O Supply Voltage 1.5V+0.1V/-0.1V
* Pipelined, double-data rate operation.
* Common data input/output bus .
* HSTL I/O
* Full dat

Applications

* where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice. ww

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K7K1618T2C 512Kx36 1Mx18 DDRII CIO SRAM Samsung semiconductor

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