K7M161825M Datasheet - Samsung semiconductor

K7M161825M (K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM

The K7M163625M and K7M161825M are 18,874,368-bits Synchronous Static SRAMs. The N tRAM TM , or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized .

( DataSheet : www.DataSheet4U.com ) K7M163625M K7M161825M Document Title 512Kx36 & 1Mx18 Flow-Through Nt RAM TM 512Kx36 & 1Mx18-Bit Flow Through Nt RAMTM Revision History Rev. No. 0.0 0.1 0.2 History 1. Initial document. 1. Update ICC & ISB values. 1. Change tOE from 3.5ns to 4.0ns at -8 . 2. Change tOE from 3.5ns to 4.0ns at -9 . 3. Change tOE from 3.5ns to 4.0ns at -10 . 1. Change ISB value from 60mA to 80mA at -8. 2. Change ISB value from 50mA to 70mA at -9 . 3. Change ISB value from 40mA.

K7M161825M Features

* 3.3V+0.165V/-0.165V Power Supply.

* I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O

* Byte Writable Function.

* Enable clock and suspend operation.

* Single READ/WRITE control pin.

* Self-Timed Write Cycle.

K7M161825M_Samsungsemiconductor.pdf