The K7M163625M and K7M161825M are 18,874,368-bits Synchronous Static SRAMs.
The N tRAM TM , or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles.
Address, data inputs, and all control signals except output enable and linear burst order are synchronized
( DataSheet : www.DataSheet4U.com ) K7M163625M K7M161825M Document Title 512Kx36 & 1Mx18 Flow-Through Nt RAM TM 512Kx36 & 1Mx18-Bit Flow Through Nt RAMTM Revision History Rev.
No.
0.0 0.1 0.2 History 1.
Initial document.
1.
Update ICC & ISB values.
1.
Change tOE from 3.5ns to 4.0ns at -8 .
2.
Change tOE from 3.5ns to 4.0ns at -9 .
3.
Change tOE from 3.5ns to 4.0ns at -10 .
1.
Change ISB value from 60mA to 80mA at -8.
2.
Change ISB value from 50mA to 70mA at -9 .
3.
Change ISB value from 40mA
K7M163625M Features
* 3.3V+0.165V/-0.165V Power Supply.
* I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O
* Byte Writable Function.
* Enable clock and suspend operation.
* Single READ/WRITE control pin.
* Self-Timed Write Cycle.
K7M161825M_Samsungsemiconductor.pdf
Datasheet Details
K7M163625M, K7M161825M
Samsung semiconductor
297.18 KB
(k7m161825m / k7m163625m) 512kx36 & 1mx18 flow-through ntram.
This datasheet PDF includes multiple part numbers: K7M163625M, K7M161825M.
Please refer to the document for exact specifications by model.
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