K7M163635B Datasheet, Ntram, Samsung semiconductor

K7M163635B Features

• Ntram
• VDD= 2.5 or 3.3V +/- 5% Power Supply.
• Byte Writable Function.
• Enable clock and suspend operation.
• Single READ/WRITE control pin.
• Self-T

PDF File Details

Part number:

K7M163635B

Manufacturer:

Samsung semiconductor

File Size:

427.71kb

Download:

📄 Datasheet

Description:

512kx36 & 1mx18 flow-through ntram. The K7M163635B and K7M161835B are 18,874,368-bits Synchronous Static SRAMs. The NtRAMTM, or No Turnaround Random Access Memory utiliz

K7M163635B Application

• Applications where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governme

TAGS

K7M163635B

Samsung semiconductor

📁 Related Datasheet

K7M163625A - 512K x 36/32 & 1M x 18 Flow-Through NtRAM (Samsung semiconductor)
K7M163625A K7M163225A K7M161825A Preliminary 512Kx36/32 & 1Mx18 Flow-Through NtRAMTM Document Title 512Kx36/32 & 1Mx18-Bit Flow Through NtRAMTM Rev.

K7M163625M - (K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM (Samsung semiconductor)
( DataSheet : .. ) K7M163625M K7M161825M Document Title 512Kx36 & 1Mx18 Flow-Through Nt RAM TM 512Kx36 & 1Mx18-Bit Flow Through Nt.

K7M163225A - 512K x 36/32 & 1M x 18 Flow-Through NtRAM (Samsung semiconductor)
K7M163625A K7M163225A K7M161825A Preliminary 512Kx36/32 & 1Mx18 Flow-Through NtRAMTM Document Title 512Kx36/32 & 1Mx18-Bit Flow Through NtRAMTM Rev.

K7M161825A - 512K x 36/32 & 1M x 18 Flow-Through NtRAM (Samsung semiconductor)
K7M163625A K7M163225A K7M161825A Preliminary 512Kx36/32 & 1Mx18 Flow-Through NtRAMTM Document Title 512Kx36/32 & 1Mx18-Bit Flow Through NtRAMTM Rev.

K7M161825M - (K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM (Samsung semiconductor)
( DataSheet : .. ) K7M163625M K7M161825M Document Title 512Kx36 & 1Mx18 Flow-Through Nt RAM TM 512Kx36 & 1Mx18-Bit Flow Through Nt.

K7M161835B - 512Kx36 & 1Mx18 Flow-Through NtRAM (Samsung semiconductor)
K7M163635B K7M161835B 512Kx36 & 1Mx18 Flow-Through NtRAMTM 18Mb NtRAMTM Specification 100TQFP/165FBGA with Pb/Pb-Free (RoHS pliant) INFORMATION .

K7M321825M - 1M x 36 & 2M x 18 Flow-Through NtRAM (Samsung semiconductor)
K7M323625M K7M321825M Preliminary 1Mx36 & 2Mx18 Flow-Through NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Flow Through NtRAMTM Revision History Rev. No.

K7M323625M - 1Mx36 & 2Mx18 Flow-Through NtRAM (Samsung semiconductor)
K7M323625M K7M321825M Document Title 1Mx36 & 2Mx18 Flow-Through NtRAMTM 1Mx36 & 2Mx18-Bit Flow Through N tRAMTM Revision History Rev. No. 0.0 0.1 0.

K7M801825B - 256Kx36 & 512Kx18-Bit Flow Through NtRAM (Samsung semiconductor)
K7M803625B K7M801825B Document Title 256Kx36 & 512Kx18 Flow-Through NtRAMTM 256Kx36 & 512Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. 0..

K7M803625B - 256Kx36 & 512Kx18-Bit Flow Through NtRAM (Samsung semiconductor)
K7M803625B K7M801825B Document Title 256Kx36 & 512Kx18 Flow-Through NtRAMTM 256Kx36 & 512Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. 0..