K7M161835B Datasheet - Samsung semiconductor

K7M161835B 512Kx36 & 1Mx18 Flow-Through NtRAM

The K7M163635B and K7M161835B are 18,874,368-bits Synchronous Static SRAMs. The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to .

K7M163635B K7M161835B 512Kx36 & 1Mx18 Flow-Through NtRAMTM 18Mb NtRAMTM Specification 100TQFP/165FBGA with Pb/Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BA.

K7M161835B Features

* VDD= 2.5 or 3.3V +/- 5% Power Supply.

* Byte Writable Function.

* Enable clock and suspend operation.

* Single READ/WRITE control pin.

* Self-Timed Write Cycle.

* Three Chip Enable for simple depth expansion with no data contention .

* A inte

K7M161835B Datasheet (427.71 KB)

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Datasheet Details

Part number:

K7M161835B

Manufacturer:

Samsung semiconductor

File Size:

427.71 KB

Description:

512kx36 & 1mx18 flow-through ntram.

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K7M161835B 512Kx36 1Mx18 Flow-Through NtRAM Samsung semiconductor

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