K7M161835B

512Kx36 & 1Mx18 Flow-Through NtRAM

Samsung semiconductor

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K7M161835B

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Samsung semiconductor

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427.71 KB

Description:

512kx36 & 1mx18 flow-through ntram.
K7M163635B K7M161835B 512Kx36 & 1Mx18 Flow-Through NtRAMTM 18Mb NtRAMTM Specification 100TQFP/165F.
The K7M163635B and K7M161835B are 18,874,368-bits Synchronous Static SRAMs. The NtRAMTM, or No Turna.

✔ K7M161835B Features

VDD= 2.5 or 3.3V +/- 5% Power Supply.
Byte Writable Function.
Enable clock and suspend operation.
Single READ/WRITE control pin.
Self-Timed Write Cycle.
Three

✔ K7M161835B Application

where Product failure couldresult in loss of life or personal or physical harm, or any military or defense a

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K7M161835B 512Kx36 1Mx18 Flow-Through NtRAM Samsung semiconductor

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✔ K7M161835B Features

✔ K7M161835B Application

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