K7N401809B_Samsungsemiconductor.pdf
Datasheet Details
Part number:
K7N403609B, K7N401809B
Manufacturer:
Samsung semiconductor
File Size:
432.13 KB
Description:
(k7n401809b / k7n403609b) 128kx36 & 256kx18 pipelined ntramtm.
Note:
This datasheet PDF includes multiple part numbers: K7N403609B, K7N401809B.
Please refer to the document for exact specifications by model.
K7N403609B, K7N401809B, (K7N401809B / K7N403609B) 128Kx36 & 256Kx18 Pipelined NtRAMTM
The K7N403609B and K7N401809B are 4,718,592 bits Synchronous Static SRAMs.
The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles.
Address, data inputs, and all control signals except output enable and linear burst order are synchronized
K7N403609B K7N401809B www.DataSheet4U.com 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM Revision History Rev.
No.
0.0 0.1 History 1.
Initial document.
1.
Changed DC parameters Icc ; from 470mA to 400mA at -25, from 440mA to 360mA at -22, from 400mA to 330mA at -20, from 370mA to 310mA at -18, ISB ; from 180mA from 170mA from 160mA from 150mA ISB1 ; from 100mA 0.2 1.0 to to to to to 160mA at -25, 155mA at -22, 150mA at -20, 140mA at -18, 80mA Aug.
1
K7N403609B Features
* FAST ACCESS TIMES PARAMETER Cycle Time Clock Access Time Output Enable Access Time Symbol tCYC tCD tOE -20 5.0 2.8 2.8 Unit ns ns ns LOGIC BLOCK DIAGRAM A [0:16]or A [0:17] LBO ADDRESS REGISTER A2~A16 or A2~A17 A0~A1 BURST ADDRESS COUNTER A′0~A′1 128Kx36 , 256Kx18 MEMORY ARRAY CLK CKE CS1 CS2
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