K7R321882M Datasheet - Samsung semiconductor

1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM

K7R321882M Features

* 1.8V+0.1V/-0.1V Power Supply.

* DLL circuitry for wide output data valid window and future freguency scaling.

* I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O .

* Separate independent read and write data ports with concurrent read and

K7R321882M General Description

on page 2 and add HSTL I/O comment Draft Date June, 30 2001 Dec. 5 2001 Remark Advance Preliminary 0.2 1. Update current characteristics in DC electrical characteristics 2. Change AC timing characteristics 3. Update JTAG instruction coding and diagrams 1. 2. 3. 4. 5. 1. 2. 3. 4. Add 4Mx9 Organizat.

K7R321882M Datasheet (201.88 KB)

K7R321882M Datasheet Preview — Preview of K7R321882M PDF

Datasheet Details

Part number:

K7R321882M

Manufacturer:

Samsung semiconductor

File Size:

201.88 KB

Description:

1mx36 & 2mx18 & 4mx9 qdrtm ii b2 sram.
K7R323682M K7R321882M K7R320982M Document Title 1Mx36 & 2Mx18 & 4Mx9 QDR TM II b2 SRAM 1Mx36-bit, 2Mx18-bit, 4Mx9-bit QDRTM II b2 SRAM Revision His.

📁 Related Datasheet

K7R321882C (K7R32xx82C) QDR II b2 SRAM (Samsung semiconductor)

K7R321884M 1M x 36 & 2M x 18 QDR II b4 SRAM (Samsung semiconductor)

K7R320884M 1M x 36 & 2M x 18 QDR II b4 SRAM (Samsung semiconductor)

K7R320982C (K7R32xx82C) QDR II b2 SRAM (Samsung semiconductor)

K7R320982M 1M x 36 & 2M x 18 & 4M x 9 QDR II b2 SRAM (Samsung semiconductor)

K7R323682C (K7R32xx82C) QDR II b2 SRAM (Samsung semiconductor)

K7R323682M 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM (Samsung semiconductor)

K7R323684M 1M x 36 & 2M x 18 QDR II b4 SRAM (Samsung semiconductor)

K7R161884B 512Kx36 & 1Mx18 QDR II b4 SRAM (Samsung semiconductor)

K7R163684B 512Kx36 & 1Mx18 QDR II b4 SRAM (Samsung semiconductor)

TAGS

K7R321882M 1Mx36 2Mx18 4Mx9 QDRTM SRAM Samsung semiconductor

Image Gallery

K7R321882M Features

K7R321882M General Description

Datasheet Details

File Size:

Description:

K7R321882M Distributor