K7R321882M Datasheet - Samsung semiconductor

K7R321882M 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM

on page 2 and add HSTL I/O comment Draft Date June, 30 2001 Dec. 5 2001 Remark Advance Preliminary 0.2 1. Update current characteristics in DC electrical characteristics 2. Change AC timing characteristics 3. Update JTAG instruction coding and diagrams 1. 2. 3. 4. 5. 1. 2. 3. 4. Add 4Mx9 Organizat.

K7R321882M Features

* 1.8V+0.1V/-0.1V Power Supply.

* DLL circuitry for wide output data valid window and future freguency scaling.

* I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O .

* Separate independent read and write data ports with concurrent read and

K7R321882M_Samsungsemiconductor.pdf