K7S1618T4C

512Kx36 & 1Mx18 QDR II b4 SRAM

Samsung semiconductor

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K7S1618T4C

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Samsung semiconductor

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416.48 KB

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512kx36 & 1mx18 qdr ii b4 sram.
K7S1636T4C K7S1618T4C 512Kx36 & 1Mx18 QDRTM II+ b4 SRAM 18Mb QDRII+ SRAM Specification 165 FBGA wi.
Input Clock Q Valid output Output Echo Clock DLL Disable Address Inputs Data Inputs NOTE Q0-35 W R .

✔ K7S1618T4C Features

1.8V+0.1V/-0.1V Power Supply.
DLL circuitry for wide output data valid window and future freguency scaling.
I/O Supply Voltage 1.5V+0.1V/-0.1V
Separate independen

✔ K7S1618T4C Application

where Product failure couldresult in loss of life or personal or physical harm, or any military or defense a

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K7S1618T4C 512Kx36 1Mx18 QDR SRAM Samsung semiconductor

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✔ K7S1618T4C Features

✔ K7S1618T4C Application

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