K7S1636T4C

512Kx36 & 1Mx18 QDR II b4 SRAM

Samsung semiconductor

K7S1636T4C Features

* 1.8V+0.1V/-0.1V Power Supply.

* DLL circuitry for wide output data valid window and future freguency scaling.

* I/O Supply Voltage 1.5V+0.1V/-0.1V

* Separate independent read and write data ports with concurrent read and write operation

* HSTL I/O

K7S1636T4C General Description

Input Clock Q Valid output Output Echo Clock DLL Disable Address Inputs Data Inputs NOTE Q0-35 W R BW0, BW1,BW2, BW3 VREF ZQ VDD VDDQ VSS TMS TDI TCK TDO NC Notes: Data Outputs Write Control Pin,active when low Read Control Pin,active when low Block Write Control Pin,active when low Input Referenc.

K7S1636T4C Datasheet (416.48 KB)

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Datasheet Details

Part number:

K7S1636T4C

Manufacturer:

Samsung semiconductor

File Size:

416.48 KB

Description:

512kx36 & 1mx18 qdr ii b4 sram.
K7S1636T4C K7S1618T4C 512Kx36 & 1Mx18 QDRTM II+ b4 SRAM 18Mb QDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN T.

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K7S1636T4C 512Kx36 1Mx18 QDR SRAM Samsung semiconductor

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K7S1636T4C Features

K7S1636T4C General Description

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