K7S1636T4C, K7S1618T4C Datasheet - Samsung semiconductor

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K7S1636T4C, K7S1618T4C 512Kx36 & 1Mx18 QDR II b4 SRAM

K7S1636T4C K7S1618T4C 512Kx36 & 1Mx18 QDRTM II+ b4 SRAM 18Mb QDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN T.
Input Clock Q Valid output Output Echo Clock DLL Disable Address Inputs Data Inputs NOTE Q0-35 W R BW0, BW1,BW2, BW3 VREF ZQ VDD VDDQ VSS TMS TDI TCK.

K7S1618T4C_Samsungsemiconductor.pdf

K7S1636T4C Datasheet Preview — This datasheet PDF includes multiple part numbers: K7S1636T4C, K7S1618T4C. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

K7S1636T4C, K7S1618T4C

Manufacturer:

Samsung semiconductor

File Size:

416.48 KB

Description:

512Kx36 & 1Mx18 QDR II b4 SRAM

Note:

This datasheet PDF includes multiple part numbers: K7S1636T4C, K7S1618T4C.
Please refer to the document for exact specifications by model.

Features

* 1.8V+0.1V/-0.1V Power Supply.
* DLL circuitry for wide output data valid window and future freguency scaling.
* I/O Supply Voltage 1.5V+0.1V/-0.1V
* Separate independent read and write data ports with concurrent read and write operation
* HSTL I/O

Applications

* where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice. ww

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