K7S3236T4C, K7S3218T4C Datasheet - Samsung semiconductor

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K7S3236T4C, K7S3218T4C (K7S3236T4C / K7S3218T4C) 1Mx36 & 2Mx18 QDRTM II b4 SRAM

K7S3236T4C K7S3218T4C 1Mx36 & 2Mx18 QDRTM II+ b4 SRAM 36Mb QDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN THI.
Input Clock Q Valid output Output Echo Clock DLL Disable Address Inputs Data Inputs NOTE Q0-35 W R BW0, BW1,BW2, BW3 VREF ZQ VDD VDDQ VSS TMS TDI TCK.

K7S3218T4C_Samsungsemiconductor.pdf

K7S3236T4C Datasheet Preview — This datasheet PDF includes multiple part numbers: K7S3236T4C, K7S3218T4C. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

K7S3236T4C, K7S3218T4C

Manufacturer:

Samsung semiconductor

File Size:

478.71 KB

Description:

(K7S3236T4C / K7S3218T4C) 1Mx36 & 2Mx18 QDRTM II b4 SRAM

Note:

This datasheet PDF includes multiple part numbers: K7S3236T4C, K7S3218T4C.
Please refer to the document for exact specifications by model.

Features

* 1.8V+0.1V/-0.1V Power Supply.
* DLL circuitry for wide output data valid window and future frequency scaling.
* I/O Supply Voltage 1.5V+0.1V/-0.1V
* Separate independent read and write data ports with concurrent read and write operation
* HSTL I/O

Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice. w

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K7S3218T4C K7S3236T4C K7S3218T4C 1Mx36 2Mx18 QDRTM SRAM Samsung semiconductor

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