K9F2808Q0B-DIB0 Datasheet - Samsung semiconductor

K9F2808Q0B-DIB0 16M x 8 Bit NAND Flash Memory

The K9F2808X0B is a 16M(16,777,216)x8bit NAND Flash Memory with a spare 512K(524,288)x8bit. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typical 200 µs and.

K9F2808Q0B-DCB0,DIB0 K9F2808U0B-VCB0,VIB0 K9F2808U0B-YCB0,YIB0 K9F2808U0B-DCB0,DIB0 FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 0.2 Initial issue. K9F2808U0B(3.3V device)’s qualification is finished K9F2808Q0B (1.8V device) - Changed typical read operation current (Icc1) from 8mA to 5mA - Changed typical program operation current (Icc2) from 8mA to 5mA - Changed typical erase operation current (Icc3) from 8mA to 5mA - Changed typica.

K9F2808Q0B-DIB0 Features

* and specifications including FAQ, please refer to Samsung’s Flash web site. http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Ele

K9F2808Q0B-DIB0 Datasheet (304.30 KB)