K9F6408U0M-TIB0 Datasheet - Samsung semiconductor

K9F6408U0M-TIB0 8M x 8 Bit NAND Flash Memory

The K9F6408U0M is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 200 µs and an erase operation can be performed in typ.

K9F6408U0M-TCB0, K9F6408U0M-TIB0 Document Title 8M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 1.1 Initial issue. Data Sheet, 1998 Data Sheet. 1999 1) Added CE don’ t care mode during the data-loading and reading 1.2 1.3 1) Revised real-time map-out algorithm(refer to technical notes) Changed device name - KM29U64000T -> K9F6408U0M-TCB0 - KM29U64000IT -> K9F6408U0M-TIB0 July 23th 1999 Sep. 15th 1999 Final Final Draft Date April 10th 1998 July 14th 1998.

K9F6408U0M-TIB0 Features

* Voltage Supply : 2.7V ~ 3.6V

* Organization - Memory Cell Array : (8M + 256K)bit x 8bit - Data Register : (512 + 16)bit x8bit

* Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte

* 528-Byte Page Read Operation - Random Access

K9F6408U0M-TIB0 Datasheet (480.51 KB)