K9F6408U0B-TCB0 Datasheet - Samsung

K9F6408U0B-TCB0 8M x 8 Bit NAND Flash Memory

The K9F6408U0B is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typical 200µs and an erase operation can be performed in typica.

K9F6408U0B-TCB0, K9F6408U0B-TIB0 Document Title 8M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 Initial issue. 1. Changed endurance : 1 million -> 100K program/erase cycles Draft Date July 17th 2000 0.1 1. Changed don’t care mode in address cycles - X can be "High" or "Low" => L must be set to "Low" Nov. 20th 2000 2. Explain how pointer operation works in detail. 3. Renamed GND input (pin # 6) on behalf of SE (pin # 6) - The SE input co.

K9F6408U0B-TCB0 Features

* and specifications including FAQ, please refer to Samsung’s Flash web site. http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Ele

K9F6408U0B-TCB0 Datasheet (416.02 KB)