K9K2G08R0A Datasheet (Samsung semiconductor)

K9K2G08R0A, FLASH MEMORY

of Copy-back program is changed 4.

TSOP package is deleted 1.

CE access time : 23ns->35ns (p.9) 1.

The value of tREA is changed.

(18ns->20ns) 2.

EDO mode is added.

The flow chart to creat the initial invalid block table is changed.

1.8V FBGA spec is merged 2.

3.3V FBGA package is added 3.

FBGA

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K9K2G08R0A Features

* Voltage Supply - 2.7 V ~3.6 V - 1.65V ~ 1.95V

* Organization - Memory Cell Array - (256M + 8,192K)bit x 8bit - Data Register - (2K + 64)bit x8bit

* Automatic Program and Erase - Page Program - (2K + 64)Byte - Block Erase - (128K + 4K)Byte

* Page Read Operation - Pag