K9K2G08R0A Datasheet - Samsung semiconductor

K9K2G08R0A FLASH MEMORY

of Copy-back program is changed 4. TSOP package is deleted 1. CE access time : 23ns->35ns (p.9) 1. The value of tREA is changed. (18ns->20ns) 2. EDO mode is added. 1. The flow chart to creat the initial invalid block table is changed. 1. 1.8V FBGA spec is merged 2. 3.3V FBGA package is added 3. FBGA.

K9K2G08U0A K9K2G08R0A FLASH MEMORY www.DataSheet4U.com K9K2G08X0A INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or addi.

K9K2G08R0A Features

* Voltage Supply - 2.7 V ~3.6 V - 1.65V ~ 1.95V

* Organization - Memory Cell Array - (256M + 8,192K)bit x 8bit - Data Register - (2K + 64)bit x8bit

* Automatic Program and Erase - Page Program - (2K + 64)Byte - Block Erase - (128K + 4K)Byte

* Page Read Operation - Pag

K9K2G08R0A_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K9K2G08R0A

Manufacturer:

Samsung semiconductor

File Size:

1.02 MB

Description:

Flash memory.

K9K2G08R0A Distributor

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K9K2G08R0A K9K2G08R0A FLASH MEMORY Samsung semiconductor