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K9K2G08R0A - FLASH MEMORY

Samsung semiconductor

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Datasheet Details

Part number	K9K2G08R0A
Manufacturer	Samsung semiconductor
File Size	1.02 MB
Description	FLASH MEMORY
Datasheet	K9K2G08R0A_Samsungsemiconductor.pdf

K9K2G08R0A Product details

Description

of Copy-back program is changed 4.

Features

Voltage Supply - 2.7 V ~3.6 V - 1.65V ~ 1.95V.
Organization - Memory Cell Array - (256M + 8,192K)bit x 8bit - Data Register - (2K + 64)bit x8bit.
Automatic Program and Erase - Page Program - (2K + 64)Byte - Block Erase - (128K + 4K)Byte.
Page Read Operation - Page Size - 2K-Byte - Random Read : 25µs(Max. ) - Serial Access : 50ns(Min. ).
Fast Write Cycle Time - Program time : 300µs(Typ. ) - Block Erase Time : 2ms(Typ. ).
Command/Address/Data Mult.

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Other Datasheets by Samsung semiconductor

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K9K2G08Q0M-PIB0 - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-Y - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
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Published: May 3, 2010 |