Datasheet Specifications
- Part number
- KM416RD8AS
- Manufacturer
- Samsung semiconductor
- File Size
- 3.74 MB
- Datasheet
- KM416RD8AS_Samsungsemiconductor.pdf
- Description
- 128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package
Description
KM416RD8AS Target Direct RDRAM™ 128Mbit RDRAM 256K x 16 bit x 2 *16 Dependent Banks for Consumer Package Direct RDRAMTM Revision 0.9 July 1999 .
Features
* for mobile, graphics and large memory systems include power management, byte masking. Target Direct RDRAM™ KM4 xx RD8AC SEC KOREA SEC KOREA KM416RD8AS-RK80 Figure 1: Direct RDRAM Consumer CSP Package Key Timing Parameters/Part Numbers Speed Organization Binning 256Kx16x32sa -RM80 -SM80 I/O FreqApplications
* including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 128Mbit Direct Rambus DRAMs (RDRAM®) ar extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of Rambus Signaling Level (RSL) technology permits 800MHz traKM416RD8AS Distributors
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