KM416V4104B 4M x 16bit CMOS Dynamic RAM with Extended Data Out

Samsung semiconductor

Description

KM416V4004B, KM416V4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out .
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs.

📥 Download Datasheet

KM416V4104B Datasheet Preview — Preview of KM416V4104B PDF

Datasheet Specifications

Part number: KM416V4104B
Manufacturer: Samsung semiconductor
File Size: 806.12 KB
Datasheet: KM416V4104B_Samsungsemiconductor.pdf
Description: 4M x 16bit CMOS Dynamic RAM with Extended Data Out

Features

* of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power c

KM416V4104B Distributors

📁 Related Datasheet

KM416C1200AT-6T KM416S1020BT-G10T KM416S1020C KM416S1021C KM416S1120AT KM416S1120D

📌 All Tags

KM416V4104B 16bit CMOS Dynamic RAM with Extended Data Out Samsung semiconductor

Samsung semiconductor KM416V4104B-like datasheet