KM416V4104B - 4M x 16bit CMOS Dynamic RAM with Extended Data Out

Samsung semiconductor

The KM416V4104B by Samsung semiconductor is a 4M x 16bit CMOS Dynamic RAM with Extended Data Out. Below is the official datasheet preview.

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KM416V4104B 4M x 16bit CMOS Dynamic RAM with Extended Data Out by Samsung semiconductor - Datasheet Preview — Official preview page of the **KM416V4104B** 4M x 16bit CMOS Dynamic RAM with Extended Data Out datasheet (Samsung semiconductor).

Datasheet Details

Part number	KM416V4104B
Manufacturer	Samsung semiconductor
File Size	806.12 KB
Description	4M x 16bit CMOS Dynamic RAM with Extended Data Out
Datasheet	KM416V4104B_Samsungsemiconductor.pdf
Additional preview pages of the KM416V4104B datasheet.

KM416V4104B Product details

Description

This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs.

Features

of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.

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Published: Apr 4, 2005 |