KM416V4104B 4M x 16bit CMOS Dynamic RAM with Extended Data Out

Samsung semiconductor

KM416V4104B Description

KM416V4004B, KM416V4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out .
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs.

KM416V4104B Features

* of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power c

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Datasheet Details

Part number: KM416V4104B
Manufacturer: Samsung semiconductor
File Size: 806.12 KB
Datasheet: KM416V4104B_Samsungsemiconductor.pdf
Description: 4M x 16bit CMOS Dynamic RAM with Extended Data Out

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📌 All Tags

16bit CMOS Dynamic RAM with Extended Data Out Samsung semiconductor

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