KSD261
Samsung semiconductor
67.68kb
Npn (low frequency power amplifier).
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KSD261 - Low Frequency Power Amplifier
(Fairchild Semiconductor)
KSD261
KSD261
Low Frequency Power Amplifier
• Complement to KSA643 • Collector Power Dissipation : PC=500mW • Suffix “-C” means Center Collector (1. .
KSD261 - NPN (LOW FREQUENCY POWER AMPLIFIER)
(Samsung semiconductor)
.
KSD261 - Low Frequency Power Amplifier
(Fairchild Semiconductor)
KSD261
KSD261
Low Frequency Power Amplifier
• Complement to KSA643 • Collector Power Dissipation : PC=500mW • Suffix “-C” means Center Collector (1. .
KSD2012 - NPN Epitaxial Silicon Transistor
(ON Semiconductor)
NPN Epitaxial Silicon Transistor
Low Frequency Power Amplifier
KSD2012
• Complementary to KSB1366 • This is a Pb−Free Device
ABSOLUTE MAXIMUM RATING.
KSD2012 - Low Frequency Power Amplifier
(Fairchild Semiconductor)
KSD2012
KSD2012
Low Frequency Power Amplifier
• Complement to KSB1366
1
TO-220F 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Abs.
KSD2012 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
KSD2012
DESCRIPTION ·High DC Current Gain-
: hFE= 100 (Min)@ IC= 0.5A ·Low Saturation Voltage-
: VCE(sat)= 1.0V (Ma.
KSD203AC2 - SOLID STATE RELAY
(Cosmo)
PRODUCT SPECIFICATION
DATE: 05/27/11'
cosmo
SOLID STATE RELAY：
ELECTRONICS CORPORATION
KSD203AC2
NO. 58022203 REV. SHEET 1 OF 2 4
1. OUTSIDE DI.
KSD203AC3 - SOLID STATE RELAY
(Cosmo)
PRODUCT SPECIFICATION
DATE: 04/22/14'
cosmo
SOLID STATE RELAY：
ELECTRONICS CORPORATION
KSD203AC3
NO. 58032203 REV. SHEET 1 OF 2 5
1. OUTSIDE DI.
KSD203DC2 - SOLID STATE RELAY
(Cosmo)
PRODUCT SPECIFICATION
DATE: 05/27/11'
cosmo
SOLID STATE RELAY：
ELECTRONICS CORPORATION
KSD203DC2
NO. 58021103 REV. SHEET 1 OF 2 4
1. OUTSIDE DI.
KSD2058 - Low Frequency Power Amplifier
(Fairchild Semiconductor)
KSD2058
KSD2058
Low Frequency Power Amplifier
1
TO-220F 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC.
