* 0ns CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable IO = 0 mA Page burst 4Banks activated tCCD = 2CLKs tRC ≥ tRC(min) CKE ≤ 0.2V 1,200 16 16 320 mA 112 80 80 480 320 mA mA -75 tCC=10ns 1,120 mA 1 Unit Note mA mA Operat
M366S3323CT0-C75 Datasheet (154.34 KB)
M366S3323CT0-C75
Samsung semiconductor
154.34 KB
Pc133 unbuffered dimm.
M366S3323CT0 Revision History Revision 0.0 (May, 2000) PC133 first published. PC133 Unbuffered DIMM Revision 0.1 (July, 2000) Ad.
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