M366S3323CT0-C75 Datasheet - Samsung semiconductor

M366S3323CT0-C75 PC133 Unbuffered DIMM

The Samsung M366S3323CT0 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S3323CT0 consists of sixteen CMOS 16M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF de.

M366S3323CT0-C75 Features

* 0ns CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable IO = 0 mA Page burst 4Banks activated tCCD = 2CLKs tRC ≥ tRC(min) CKE ≤ 0.2V 1,200 16 16 320 mA 112 80 80 480 320 mA mA -75 tCC=10ns 1,120 mA 1 Unit Note mA mA Operat

M366S3323CT0-C75_Samsungsemiconductor.pdf