M464S1724ETS, M464S0924ETS Datasheet - Samsung semiconductor

M464S1724ETS 64MB / 128MB Unbuffered SODIMM

Pin Name A0 ~ A11 BA0 ~ BA1 DQ0 ~ DQ63 CLK0 ~ CLK1 CKE0 ~ CKE1 CS0 ~ CS1 RAS CAS Select bank Data input/output Clock input Clock enable input Chip select input Row address strobe Column address strobe Function Address input (Multiplexed) WE DQM0 ~ 7 VDD VSS SDA SCL DU NC Pin Name Write enable DQM Po.

64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb E-die 64-bit Non ECC Revision 1.4 March. 2004 Rev. 1.4 March. 2004 64MB, 128MB Unbuffered SODIMM Revision History Revision 1.0 (November, 2002) - First release Revision 1.1 (May. 2003) - Merged Spec. Revision 1.2 (June. 2003) - Correct Typo. Revision 1.3 (February. 2004) - Correct Typo. Revision 1.4 (March. 2004) - Corrected package dimension. SDRAM Rev. 1.4 March. 2004 64MB, 128MB Unbuffe.

M464S1724ETS Features

* in), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 20ns CKE ≥ VI

M464S0924ETS_Samsungsemiconductor.pdf