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M470T2953Bxx 200pin Unbuffered SODIMM

M470T2953Bxx Description

256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC INFORMATION IN T.
Pin Name CK0,CK1 CK0,CK1 CKE0,CKE1 RAS CAS WE S0,S1 A0~A9, A11~A13 A10/AP BA0,BA1 ODT0,ODT1 SCL Function Clock Inputs, positive line Clock Inputs, ne.

M470T2953Bxx Features

* Performance range D5(DDR2-533) Speed@CL3 Speed@CL4 CL-tRCD-tRP 400 533 4-4-4 CC(DDR2-400) 400 400 3-3-3 Unit Mbps Mbps CK
* JEDEC standard 1.8V ± 0.1V Power Supply
* VDDQ = 1.8V ± 0.1V
* 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin
* 4 Banks

M470T2953Bxx Applications

* where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice. R

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200pin Unbuffered SODIMM Samsung semiconductor
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