M470T2953CZ0 Datasheet - Samsung semiconductor

DDR2 Unbuffered SODIMM

M470T2953CZ0 Features

* Performance range D6(DDR2-667) Speed@CL3 Speed@CL4 Speed@CL5 CL-tRCD-tRP 400 667 667 4-4-4 E6(DDR2-667) 400 533 667 5-5-5 D5(DDR2-533) 400 533 533 4-4-4 CC(DDR2-400) 400 400 3-3-3 Unit Mbps Mbps Mbps CK

* JEDEC standard 1.8V ± 0.1V Power Supply

* VDDQ = 1.8V ± 0.1V

M470T2953CZ0 General Description

Pin Name CK0,CK1 CK0,CK1 CKE0,CKE1 RAS CAS WE S0,S1 A0~A9, A11~A13 A10/AP BA0,BA1 ODT0,ODT1 SCL Function Clock Inputs, positive line Clock Inputs, negative line Clock Enables Row Address Strobe Column Address Strobe Write Enable Chip Selects Address Inputs Address Input/Autoprecharge SDRAM Bank Add.

M470T2953CZ0 Datasheet (270.34 KB)

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Datasheet Details

Part number:

M470T2953CZ0

Manufacturer:

Samsung semiconductor

File Size:

270.34 KB

Description:

Ddr2 unbuffered sodimm.
256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC Revision 1.1 Mar.

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M470T2953CZ0 DDR2 Unbuffered SODIMM Samsung semiconductor

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M470T2953CZ0 Features

M470T2953CZ0 General Description

Datasheet Details

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