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MR16R1622AF0

(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die

MR16R1622AF0 Features

* 256M x 16/18 -CN9 -CM8 -CK8

* High speed up to 1066 MHz RDRAM storage

* 184 edge connector pads with 1mm pad spacing

* Module PCB size : 133.35mm x 31.75mm x 1.27mm (5.25” x 1.25” x 0.05”) - 256Mb base RIMM Module

* Module PCB size : 133.35mm x 34.93mm x 1.27mm Fo

MR16R1622AF0 General Description

Signal Pins A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A72, A74, A76, A78, A80, A82, A84, A86, A88, A90, A92, B1, B3, B5, B7, B9, B11, B13, B15, B17, B19, B21, B23, B25, B27, B29, B31, B33, B39, B52, B60, B62, B64, B66, B68.

MR16R1622AF0 Datasheet (419.61 KB)

Preview of MR16R1622AF0 PDF

Datasheet Details

Part number:

MR16R1622AF0

Manufacturer:

Samsung semiconductor

File Size:

419.61 KB

Description:

(mr1xr1622(4/8/g)af0) (16mx16)x2(4/8/16)pcs rimm module based on 256mb a-die.
MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) Change History Version 1.1 (August 2001)
* First copy.
* Based on the 1.0ver Rambus 256/288Mbit RIM.

📁 Related Datasheet

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MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.

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MR16R1628AF0 - (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (Samsung semiconductor)
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MR16R1628DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)
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MR16R1628DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)
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TAGS

MR16R1622AF0 MR1xR16224 GAF0 16Mx16x24 16pcs RIMM Module based 256Mb A-die Samsung semiconductor

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