MR16R1624AF0, MR16R1622AF0 Datasheet - Samsung semiconductor

MR16R1624AF0, MR16R1622AF0, (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die

MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) Change History Version 1.1 (August 2001) * First copy.* Based on the 1.0ver Rambus 256/288Mbit RIM.
Signal Pins A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A72, A74, A76, A78.

Features

* 256M x 16/18 -CN9 -CM8 -CK8
* High speed up to 1066 MHz RDRAM storage
* 184 edge connector pads with 1mm pad spacing
* Module PCB size : 133.35mm x 31.75mm x 1.27mm (5.25” x 1.25” x 0.05”) - 256Mb base RIMM Module
* Module PCB size : 133.35mm x 34.93mm x 1.27mm Fo

Applications

* including computer memory, personal computers, workstations and other applications where high bandwidth and low latency are required. The RIMM module consists of 256/288Mb devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 16 or 18 bits. The use of Rambus Signaling Level (R

MR16R1622AF0_Samsungsemiconductor.pdf