MR16R1624GEG0
Samsung semiconductor
485.61kb
Key timing parameters. Signal Pins A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A
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📁 Related Datasheet
MR16R1624AF0 - (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
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Change History
Version 1.1 (August 2001)
* First copy. * Based on the 1.0ver Rambus 256/288Mbit RIMM Modul.
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Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.
MR16R1624DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
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MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.
MR16R1622AF0 - (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
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Version 1.1 (August 2001)
* First copy. * Based on the 1.0ver Rambus 256/288Mbit RIMM Modul.
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Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.
MR16R1628AF0 - (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
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Change History
Version 1.1 (August 2001)
* First copy. * Based on the 1.0ver Rambus 256/288Mbit RIMM Modul.
MR16R1628DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
(Samsung semiconductor)
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.
MR16R1628DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
(Samsung semiconductor)
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.
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Change History
Version 0.1 (December 2003) - Preliminary
* First copy. * Based on the 1.0 ver. (July 2002) 256/288.
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Change History
Version 1.1 (August 2001)
* First copy. * Based on the 1.0ver Rambus 256/288Mbit RIMM Modul.