MR16R1628DF0, MR16R1622 Datasheet - Samsung semiconductor

MR16R1628DF0, MR16R1622, (MR1xR1622(4/8/G)DF0) Key Timing Parameters

MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy.* Based on the 1.4 ver.(July 2002) 256/288Mbit A.
Signal Pins A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A72, A74, A76, A78.

Features

* High speed up to 1066 MHz RDRAM storage
* 184 edge connector pads with 1mm pad spacing
* Module PCB size : 133.35mm x 31.75mm x 1.27mm (5.25” x 1.25” x 0.05”) - 256Mb and 288Mb base PC800 RIMM Module
* Module PCB size : 133.35mm x 34.93mm x 1.27mm (5.25” x 1.375” x

Applications

* including computer memory, personal computers, workstations and other applications where high bandwidth and low latency are required. The RIMM module consists of 256/288Mb devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 16 or 18 bits. The use of Rambus Signaling Level (R

MR16R1622_Samsungsemiconductor.pdf