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MR16R1628GEG0

Key Timing Parameters

MR16R1628GEG0 Features

* High speed up to 1066 MHz RDRAM storage

* 184 edge connector pads with 1mm pad spacing

* Module PCB size : 133.35mm x 31.75mm x 1.27mm Form Factor The RIMM modules are offered in 184-pad 1mm edge connector pad pitch suitable for 184 contact RIMM connectors. Figure 1 below,

MR16R1628GEG0 General Description

Signal Pins A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A72, A74, A76, A78, A80, A82, A84, A86, A88, A90, A92, B1, B3, B5, B7, B9, B11, B13, B15, B17, B19, B21, B23, B25, B27, B29, B31, B33, B39, B52, B60, B62, B64, B66, B68.

MR16R1628GEG0 Datasheet (485.61 KB)

Preview of MR16R1628GEG0 PDF

Datasheet Details

Part number:

MR16R1628GEG0

Manufacturer:

Samsung semiconductor

File Size:

485.61 KB

Description:

Key timing parameters.
MR16R1624(8/G)EG0 MR18R1624(8/G)EG0 Change History Version 0.1 (December 2003) - Preliminary
* First copy.
* Based on the 1.0 ver. (July 2002).

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MR16R1624DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)
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MR16R1628GEG0 Key Timing Parameters Samsung semiconductor

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