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MR16R162GAF0

(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die

MR16R162GAF0 Features

* 256M x 16/18 -CN9 -CM8 -CK8

* High speed up to 1066 MHz RDRAM storage

* 184 edge connector pads with 1mm pad spacing

* Module PCB size : 133.35mm x 31.75mm x 1.27mm (5.25” x 1.25” x 0.05”) - 256Mb base RIMM Module

* Module PCB size : 133.35mm x 34.93mm x 1.27mm Fo

MR16R162GAF0 General Description

Signal Pins A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A72, A74, A76, A78, A80, A82, A84, A86, A88, A90, A92, B1, B3, B5, B7, B9, B11, B13, B15, B17, B19, B21, B23, B25, B27, B29, B31, B33, B39, B52, B60, B62, B64, B66, B68.

MR16R162GAF0 Datasheet (419.61 KB)

Preview of MR16R162GAF0 PDF

Datasheet Details

Part number:

MR16R162GAF0

Manufacturer:

Samsung semiconductor

File Size:

419.61 KB

Description:

(mr1xr1622(4/8/g)af0) (16mx16)x2(4/8/16)pcs rimm module based on 256mb a-die.
MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) Change History Version 1.1 (August 2001)
* First copy.
* Based on the 1.0ver Rambus 256/288Mbit RIM.

📁 Related Datasheet

MR16R162GDF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.

MR16R162GDF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.

MR16R1622AF0 - (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (Samsung semiconductor)
MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RIMM Modul.

MR16R1622DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.

MR16R1624AF0 - (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (Samsung semiconductor)
MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RIMM Modul.

MR16R1624DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.

MR16R1624DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.

MR16R1624GEG0 - Key Timing Parameters (Samsung semiconductor)
MR16R1624(8/G)EG0 MR18R1624(8/G)EG0 Change History Version 0.1 (December 2003) - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288.

TAGS

MR16R162GAF0 MR1xR16224 GAF0 16Mx16x24 16pcs RIMM Module based 256Mb A-die Samsung semiconductor

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