MR18R162GAF0 Datasheet, A-die, Samsung semiconductor

MR18R162GAF0 Features

• A-die 256M x 16/18 -CN9 -CM8 -CK8
• High speed up to 1066 MHz RDRAM storage
• 184 edge connector pads with 1mm pad spacing
• Module PCB size : 133.35mm x 31.75mm x 1

PDF File Details

Part number:

MR18R162GAF0

Manufacturer:

Samsung semiconductor

File Size:

419.61kb

Download:

📄 Datasheet

Description:

(mr18r1622(4/8/g)af0) (16mx16)x2(4/8/16)pcs rimm module based on 256mb a-die. Signal Pins A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A

MR18R162GAF0 Application

• Applications including computer memory, personal computers, workstations and other applications where high bandwidth and low latency are required. T

TAGS

📁 Related Datasheet

MR18R162GDF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.

MR18R162GDF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.

MR18R1622AF0 - (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (Samsung semiconductor)
MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RIMM Modul.

MR18R1622DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.

MR18R1622DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.

MR18R1624AF0 - (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (Samsung semiconductor)
MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RIMM Modul.

MR18R1624DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.

MR18R1624DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.

MR18R1624GEG0 - Key Timing Parameters (Samsung semiconductor)
MR16R1624(8/G)EG0 MR18R1624(8/G)EG0 Change History Version 0.1 (December 2003) - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288.

MR18R1628DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.