MR18R326GAG0 (32Mx18) 16pcs RIMM Module based on 576Mb A-die

Samsung semiconductor

Description

MR18R326GAG0 Change History Version 1.0 (Mar.2004) * First copy.* Based on the 1.0 ver.(July 2002) 256/288Mbit D-die RIMM Module Datasheet.
Signal Pins A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A72, A74, A76, A78.

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Datasheet Specifications

Part number: MR18R326GAG0
Manufacturer: Samsung semiconductor
File Size: 259.11 KB
Datasheet: MR18R326GAG0_Samsungsemiconductor.pdf
Description: (32Mx18) 16pcs RIMM Module based on 576Mb A-die

Features

* High speed up to 1066 MHz RDRAM storage
* 184 edge connector pads with 1mm pad spacing
* Module PCB size : 133.35mm x 34.93mm x 1.27mm
* Each RDRAM device has 32 banks, for a total of 512
* Gold plated edge connector pad contacts
* Serial Presence De

Applications

* including computer memory, personal computers, workstations and other applications where high bandwidth and low latency are required. The RIMM module consists of 576Mb RDRAM devices. These are extremely high-speed CMOS DRAMs organized as 32M words by 18 bits. The use of Rambus Signaling Level (RSL)

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MR18R326GAG0 32Mx18 16pcs RIMM Module based 576Mb A-die Samsung semiconductor

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