S1T8825B Datasheet - Samsung semiconductor

S1T8825B 1.3GHZ DUAL PLL

Pin No. 1 2, 15 3 4, 13 5 6 7 8 9 10 11 12 14 16 Symbol Fin1 Vcc CP1 GND LD CK DATA EN BO OSCO OSCI SW CP2 Fin2 I/O I * O * O I I I O O I O O I Description Input terminal of channel 1 RF signal. Power supply voltage input. PIN2 and PIN15 are connected together. Output terminal of cha.

www.DataSheet.co.kr 1.3GHZ DUAL PLL S1T8825B INTRODUCTION The S1T8825B is a high performance dual frequency synthesizer with two integrated high frequency pre-scalers for RF operation up to 1.3 GHz. The S1T8825B is composed of modulus pre-scalers providing 64 and 66, no dead-zone PFD, selectable charge pump current, selectable power down mode circuits, lock detector output, and loop filter ’s time constant switch. It is fabricated using the ASP5HB Bi-CMOS process and is available 16-TSSOP wit.

S1T8825B Features

* Two systems for receiver and transmitter Very low operating current consumption: Icc = Typ. 7.0mA @ 3.0V Low operating power supply voltage : 2.2 to 5.5V ( 200MHz to 550MHz Operating ) 2.7 to 3.6V ( 550MHz to 1

S1T8825B_Samsungsemiconductor.pdf