2N6515 Datasheet (Samsung) - NPN EPITAXIAL SILICON TRANSISTOR

2N6515, NPN EPITAXIAL SILICON TRANSISTOR

2N6515 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Collector-Emitter Voltage: VCEO= 250V Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG 250 250 6 500 625 150 -55 ~ 150 Unit V V V mA m&&W TO-92 ELECTRICAL CHARACTERISTICS