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2N6515 NPN EPITAXIAL SILICON TRANSISTOR

Samsung

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Description

2N6515 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR * Collector-Emitter Voltage: VCEO= 250V * Collector Dissipation: PC .

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Datasheet Specifications

Part number: 2N6515
Manufacturer: Samsung
File Size: 42.01 KB
Datasheet: 2N6515-Samsung.pdf
Description: NPN EPITAXIAL SILICON TRANSISTOR

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2N6515 NPN EPITAXIAL SILICON TRANSISTOR Samsung

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