K4T51083QC - 512Mb C-die DDR2 SDRAM

Samsung

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Datasheet Details

Part number: K4T51083QC
Manufacturer: Samsung
File Size: 630.58 KB
Datasheet: K4T51083QC_Samsung.pdf
Description: 512Mb C-die DDR2 SDRAM

K4T51083QC Product details

Description

2.3 Addressing 3. Absolute Maximum Rating 4. AC & DC Operating Conditions & Specifications Page 2 of 29 Rev.1.2 May 2005 512Mb C-die DDR2 SDRAM 0. Ordering Information Org.128Mx4 64Mx8 32Mx16 DDR2-667 4-4-41 K4T51043QC-ZC(L)D6 K4T51083QC-ZC(L)D6 K4T51163QC-ZC(L)D6 DDR2-667 5-5-51 K4T51043QC-ZC(L)E6 K4T51083QC-ZC(L)E6 K4T51163QC-ZC(L)E6 DDR2-533 4-4-41 K4T51043QC-ZC(L)D5 K4T51083QC-ZC(L)D5 K4T51163QC-ZC(L)D5 DDR2 SDRAM DDR2-400 3-3-31 K4T51043QC-ZC(L)CC K4T51083QC-ZC(L)CC K4T51163QC-ZC(L)

Features

Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-667 4-4-4 4 12 12 51 DDR2-667 5-5-5 5 15 15 54 DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns.
JEDEC standard 1.8V ± 0.1V Power Supply.
VDDQ = 1.8V ± 0.1V.
200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin.
4 independent internal banks.
Posted CAS.
Programmable CAS Latency: 3, 4, 5.
Programmable Additive Latency: 0, 1 ,.

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