* Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns
* JEDEC standard 1.8V ± 0.1V Power Supply
* VDDQ = 1.8V ± 0.1V
* 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/ pin
* 4 Banks
* Post
K4T51043QB-GCD5 Datasheet (633.79 KB)
K4T51043QB-GCD5
Samsung semiconductor
633.79 KB
512mb b-die ddr2 sdram.
512Mb B-die DDR2 SDRAM www.DataSheet4U.com DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 1.5 July 2005 INFORMATION IN THIS DOCUMENT IS .
📁 Related Datasheet
K4T51043QB-ZCD5 512Mb B-die DDR2 SDRAM (Samsung semiconductor)
K4T51043Q 512Mb B-die DDR2 SDRAM (Samsung)
K4T51043QE 512Mb E-die DDR2 SDRAM Specification (Samsung semiconductor)
CSD18501Q5A 512Mb G-die DDR2 SDRAM (Samsung)
K4T51043QI 512Mb I-die DDR2 SDRAM (Samsung)
K4T51043QJ 512Mb J-die DDR2 SDRAM (Samsung)
K4T51083QB-GCD5 512Mb B-die DDR2 SDRAM (Samsung semiconductor)
K4T51083QB-ZCD5 512Mb B-die DDR2 SDRAM (Samsung semiconductor)
K4T51083QC 512Mb C-die DDR2 SDRAM (Samsung)
K4T51083QE 512Mb E-die DDR2 SDRAM Specification (Samsung semiconductor)
