K4T51043QG - 512Mb G-die DDR2 SDRAM
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Top View S 1 8 D S 2 7 D S 3 D 6 D G 4 5 D P0093-01 (1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz.
Cu pad on a 0.06inch thick FR4 PCB.
(2) Pulse duration ≤300μs, duty cycle ≤2% GATE CHARGE 10
K4T51043QG Features
* Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY Typical Values at 25°C unless otherwise stated VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (4.5V) Gate
