* Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns
* JEDEC standard 1.8V ± 0.1V Power Supply
* VDDQ = 1.8V ± 0.1V
* 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/ pin
* 4 Banks
* Post
K4T51163QB-GCD5 Datasheet (633.79 KB)
K4T51163QB-GCD5
Samsung semiconductor
633.79 KB
512mb b-die ddr2 sdram.
512Mb B-die DDR2 SDRAM www.DataSheet4U.com DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 1.5 July 2005 INFORMATION IN THIS DOCUMENT IS .
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