K4T51163QB-GCD5, K4T51083QB Datasheet - Samsung semiconductor

K4T51163QB-GCD5 - 512Mb B-die DDR2 SDRAM

2.3 Addressing 3.

Absolute Maximum Rating 4.

AC & DC Operating Conditions & Specifications Page 2 of 28 Rev.

1.5 July 2005 512Mb B-die DDR2 SDRAM 0.

Ordering Information Organization 128Mx4 64Mx8 32Mx16 DDR2-533 4-4-4 K4T51043QB-GCD5 K4T51043QB-ZCD5 K4T51083QB-GCD5 K4T51083QB-ZCD5 K4T51163QB-GC

512Mb B-die DDR2 SDRAM www.DataSheet4U.com DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 1.5 July 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.

ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTE

K4T51163QB-GCD5 Features

* Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns

* JEDEC standard 1.8V ± 0.1V Power Supply

* VDDQ = 1.8V ± 0.1V

* 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/ pin

* 4 Banks

* Post

K4T51083QB_Samsungsemiconductor.pdf