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K4T51163QB-GCD5, K4T51083QB 512Mb B-die DDR2 SDRAM

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Description

512Mb B-die DDR2 SDRAM www.DataSheet4U.com DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 1.5 July 2005 INFORMATION IN THIS DOCUMENT IS .
2.

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This datasheet PDF includes multiple part numbers: K4T51163QB-GCD5, K4T51083QB. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
K4T51163QB-GCD5, K4T51083QB
Manufacturer
Samsung semiconductor
File Size
633.79 KB
Datasheet
K4T51083QB_Samsungsemiconductor.pdf
Description
512Mb B-die DDR2 SDRAM
Note
This datasheet PDF includes multiple part numbers: K4T51163QB-GCD5, K4T51083QB.
Please refer to the document for exact specifications by model.

Features

* Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns
* JEDEC standard 1.8V ± 0.1V Power Supply
* VDDQ = 1.8V ± 0.1V
* 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/ pin
* 4 Banks
* Post

Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice. P

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