K4T51163QB - 512Mb B-die DDR2 SDRAM

Samsung

K4T51163QB Datasheet Preview — Preview of K4T51163QB PDF

Datasheet Details

Part number	K4T51163QB
Manufacturer	Samsung
File Size	507.78 KB
Description	512Mb B-die DDR2 SDRAM
Datasheet	K4T51163QB_Samsung.pdf

K4T51163QB Product details

Description

2.3 Addressing 3. Absolute Maximum Rating 4. AC & DC Operating Conditions & Specifications Page 2 of 29 Rev.1.4 Feb.2005 512Mb B-die DDR2 SDRAM 0. Ordering Information Organization 128Mx4 K4T51043QB-ZCD5 K4T51083QB-GCD5 64Mx8 K4T51083QB-ZCD5 K4T51163QB-GCD5 32Mx16 K4T51163QB-ZCD5 Note : Speed bin is in order of CL-tRCD-tRP K4T51163QB-ZCCC Lead-Free K4T51083QB-ZCCC K4T51163QB-GCCC Lead-Free Leaded K4T51043QB-ZCCC K4T51083QB-GCCC Lead-Free Leaded DDR2-533 4-4-4 K4T51043QB-GCD5 DDR2-400 3-3-

Features

Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns.
JEDEC standard 1.8V ± 0.1V Power Supply.
VDDQ = 1.8V ± 0.1V.
200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin.
4 Banks.
Posted CAS.
Programmable CAS Latency: 3, 4, 5.
Programmable Additive Latency: 0, 1 , 2 , 3 and 4.
Write Latency(WL) = Read Latency(RL) -1.
Burst Length: 4 , 8(Interleave.

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Published: Aug 15, 2005 |