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K4T51163QB Datasheet - Samsung

K4T51163QB 512Mb B-die DDR2 SDRAM

2.3 Addressing 3. Absolute Maximum Rating 4. AC & DC Operating Conditions & Specifications Page 2 of 29 Rev. 1.4 Feb. 2005 512Mb B-die DDR2 SDRAM 0. Ordering Information Organization 128Mx4 K4T51043QB-ZCD5 K4T51083QB-GCD5 64Mx8 K4T51083QB-ZCD5 K4T51163QB-GCD5 32Mx16 K4T51163QB-ZCD5 Note : Speed.

K4T51163QB Features

* Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns

* JEDEC standard 1.8V ± 0.1V Power Supply

* VDDQ = 1.8V ± 0.1V

* 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin

* 4 Banks

* Poste

K4T51163QB_Samsung.pdf

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Datasheet Details

Part number:

K4T51163QB

Manufacturer:

Samsung

File Size:

507.78 KB

Description:

512mb b-die ddr2 sdram.

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K4T51163QB K4T51163QB 512Mb B-die DDR2 SDRAM Samsung

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