K4T51163QB - 512Mb B-die DDR2 SDRAM
(Samsung)
512Mb B-die DDR2 SDRAM
DDR2 SDRAM
512Mb B-die DDR2 SDRAM Specification Version 1.4
February 2005
Page 1 of 29
Rev. 1.4 Feb. 2005
512Mb B-die DDR.
K4T51163QB-GCD5 - 512Mb B-die DDR2 SDRAM
(Samsung semiconductor)
512Mb B-die DDR2 SDRAM
..
DDR2 SDRAM
512Mb B-die DDR2 SDRAM Specification
Version 1.5
July 2005
INFORMATION IN THIS DOCUMENT IS .
K4T51163QB-ZCD5 - 512Mb B-die DDR2 SDRAM
(Samsung semiconductor)
512Mb B-die DDR2 SDRAM
..
DDR2 SDRAM
512Mb B-die DDR2 SDRAM Specification
Version 1.5
July 2005
INFORMATION IN THIS DOCUMENT IS .
K4T51163QE - 512Mb E-die DDR2 SDRAM Specification
(Samsung semiconductor)
K4T51043QE K4T51083QE K4T51163QE
DDR2 SDRAM
..
512Mb E-die DDR2 SDRAM Specification
60FBGA & 84FBGA with Pb-Free (RoHS pliant)
.
CSD18503Q5A - 512Mb G-die DDR2 SDRAM
(Samsung)
CSD18503Q5A
.ti. SLPS358 – JUNE 2012
40V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD18503Q5A
1
FEATURES
Ultra Low Qg and Qgd Low Th.
K4T51163QI - 512Mb I-die DDR2 SDRAM
(Samsung)
Rev. 1.0, Mar. 2010 K4T51043QI K4T51083QI K4T51163QI
512Mb I-die DDR2 SDRAM
60 & 84FBGA with Lead-Free & Halogen-Free (RoHS pliant)
datasheet SAMSU.
K4T51163QJ - 512Mb J-die DDR2 SDRAM
(Samsung)
Rev. 1.1, Jul. 2011 K4T51043QJ K4T51083QJ K4T51163QJ
512Mb J-die DDR2 SDRAM
60 & 84FBGA with Lead-Free & Halogen-Free (RoHS pliant)
datasheet SAMSU.
K4T51163QN - 512Mb N-die DDR2 SDRAM
(Samsung)
Rev. 1.0, Jun. 2016 K4T51083QN K4T51163QN
512Mb N-die DDR2 SDRAM
60 & 84FBGA with Lead-Free & Halogen-Free (RoHS pliant)
datasheet SAMSUNG ELECTRON.