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K4T51163QG, K4T51043QG - 512Mb G-die DDR2 SDRAM

Samsung

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K4T51163QG Datasheet Preview — This datasheet PDF includes multiple part numbers: K4T51163QG, K4T51043QG. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	K4T51163QG, K4T51043QG
Manufacturer	Samsung
File Size	0.96 MB
Description	512Mb G-die DDR2 SDRAM
Datasheet	K4T51043QG-Samsung.pdf
Note	This datasheet PDF includes multiple part numbers: K4T51163QG, K4T51043QG. Please refer to the document for exact specifications by model.

K4T51163QG Product details

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Features

Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package.

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Other Datasheets by Samsung

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K4T51163QI - 512Mb I-die DDR2 SDRAM
K4T51163QJ - 512Mb J-die DDR2 SDRAM
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K4T51043Q - 512Mb B-die DDR2 SDRAM

Published: Apr 22, 2014 |